gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 1 * restrictions on hazardous substances, european union directive 2002/95/ec. part number description magx - 000035 - 045000 bulk packaging magx - s10035 - 045000 sample board (2.7 - 3.5 ghz) ordering information magx - 000035 - 045000 features ? gan on sic depletion mode transistor ? common - source configuration ? broadband class ab operation ? thermally enhanced cu/mo/cu package ? rohs* compliant ? +50v typical operation ? mttf = 600 years (t j < 200c) application ? civilian and military pulsed radar description the magx - 000035 - 045000 is a gold metalized unmatched gallium nitride (gan) on silicon carbide (sic) rf power transistor optimized for civilian and military radar pulsed applications between dc - 3500 mhz. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for todays demanding application needs. the magx - 000035 - 045000 is constructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 2 electrical specifications 1 : freq. = 2700 - 3500 mhz, t a = 25c parameter test conditions symbol min. typ. max. units rf functional tests: v dd = 50 v, i dq = 100 ma, 1 ms pulse, 10% duty output power p in = 4 w p out 45 54 - w power gain p in = 4 w g p 10.5 11.3 - db drain efficiency p in = 4 w d 48 55 - % input return loss p in = 4 w irl - - 13 - 8 db load mismatch stability p in = 4 w vswr - s - 5:1 - - load mismatch tolerance p in = 4 w vswr - t - 10:1 - - 1. electrical specifications measured in macom rf evaluation board. parameter test conditions symbol min. typ. max. units dc characteristics drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - - 3.0 ma gate threshold voltage v ds = 5 v, i d = 6 ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5 v, i d = 1500 ma g m 1.1 - - s dynamic characteristics input capacitance v ds = 0 v, v gs = - 8 v, f = 1 mhz c iss - 13.2 - pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 5.6 - pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 0.5 - pf electrical characteristics: t a = 25c electrical specifications 1 : freq. = 1030 - 1090 mhz, t a = 25c parameter test conditions symbol min. typ. max. units rf functional tests: v dd = 50 v, i dq = 100 ma, 1 ms pulse, 10% duty output power p in = 0.9 w p out - 60 - w power gain p in = 0.9 w g p - 18 - db drain efficiency p in = 0.9 w d - 64 - % input return loss p in = 0.9 w irl - - 8 - db load mismatch stability p in = 0.9 w vswr - s - 5:1 - - load mismatch tolerance p in = 0.9 w vswr - t - 10:1 - -
gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 3 absolute maximum ratings 2,3,4 parameter limit supply voltage (v dd ) (pulsed) +65 v supply voltage (v gg ) - 8 to 0 v supply current (i dmax ) for pulsed operation at v dd = 50 v 3 a input power (p in ) for pulsed operation at v dd = 50 v p in (nominal) + 3 db absolute max. junction/channel temperature 200oc power dissipation at 85 oc for pulsed operation at v dd = 50 v 48 w mttf (t j <200c) 600 years thermal resistance, (t j = 200 oc) v dd = 50 v, i dq = 100 ma, pulsed 1 ms, 10% duty cycle 2.3 oc/w operating temperature - 40 to +95oc storage temperature - 65 to +150oc mounting temperature see solder reflow profile esd min. - charged device model (cdm) 200 v esd min. - human body model (hbm) 550 v 2. operation of this device above any one of these parameters may cause permanent damage. 3. channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize l ife time. 4. for saturated performance it is recommended that the sum of (3*v dd + abs(v gg )) <175 v.
gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 4 test fixture assembly (2700 - 3500 mhz) contact factory for gerber file or additional circuit information. correct device sequencing test fixture impedances turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (+50v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs. f (mhz) z if ( ) z of ( ) 2700 9.0 + j1.2 7.0 + j1.6 2900 9.1 + j1.2 7.7 + j1.6 3100 8.9 + j1.2 7.8 + j1.6 3300 7.8 + j 1.2 8.0 + j1.7 3500 6.3 + j1.2 8.8 + j1.7 i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 5 typical performance curves application section 2700 - 3500 mhz, 1 ms pulse, 10% duty, v dd = 50 v, idq = 100 ma, t a = 25c output power vs. input power drain efficiency vs. output power
gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 6 typical performance curves application section 2700 - 3500 mhz, 1 ms pulse, 10% duty, v dd = 50 v, idq = 100 ma, t a = 25c gain vs. frequency input return loss vs. frequency
gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 7 typical performance curves application section 1030 - 1090 mhz, 1 ms pulse, 10% duty, v dd = 50 v, idq = 100 ma, t a = 25c output power vs. input power gain vs. output power drain efficiency vs. output power input return loss vs. frequency
gan on sic hemt pulsed power transistor 45 w peak, dc - 3500 mhz, 1 ms pulse, 10% duty rev. v1 magx - 000035 - 045000 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 8 outline drawing magx - 000035 - 045000
|
